Ultralow-threshold microcavity Raman laser on a microelectronic chip
نویسندگان
چکیده
منابع مشابه
Ultralow-threshold microcavity Raman laser on a microelectronic chip.
Using ultrahigh-Q toroid microcavities on a chip, we demonstrate a monolithic microcavity Raman laser. Cavity photon lifetimes in excess of 100 ns combined with mode volumes typically of less than 1000 (microm)3 significantly reduce the threshold for stimulated Raman scattering. In conjunction with the high ideality of a tapered optical fiber coupling junction, stimulated Raman lasing is observ...
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We demonstrate efficient Raman lasing with CaF2 whispering-gallery-mode resonators. Continuous-wave emission threshold is shown to be possible below 1 microW with a 5mm cavity, which is to our knowledge orders of magnitude lower than in any other Raman source. Low-threshold lasing is made possible by the ultrahigh optical quality factor of the cavity, of the order of Q=5x10(10). Stokes componen...
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Lasing from an erbium-doped high-Q silica toroidal microcavity coupled to a tapered optical fiber is demonstrated and analyzed. Average erbium ion concentrations were in the range 0.009–0.09 at. %, and a threshold power as low as 4.5 mW and an output lasing power as high as 39.4 mW are obtained from toroidal cavities with major diameters in the range 25–80 mm. Controlling lasing wavelength in a...
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A single-mask process is used to fabricate metal microchannels of 5–10 μm in width, 10–40 μm in height and millimeters in length, monolithically (i.e., no bonding) on the chip front side. Taking advantage of the small size and the diverging cross-section allowed for these microchannels, we explore the air cooling of a microelectronic chip, addressing the limitations of the liquid cooling with t...
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ژورنال
عنوان ژورنال: Optics Letters
سال: 2004
ISSN: 0146-9592,1539-4794
DOI: 10.1364/ol.29.001224